کاربرد سیلیکون در کنترل تنش اسمزی و تأثیر آن بر خصوصیات جوانه‏ زنی بذر و رشد گیاهچه کاملینا

نوع مقاله : مقاله پژوهشی

نویسندگان

1 گروه تولید و ژنتیک گیاهی، پردیس کشاورزی و منابع طبیعی، دانشگاه رازی.

2 گروه تولید و ژنتیک گیاهی، پردیس کشاورزی و منابع طبیعی، دانشگاه رازی، کرمانشاه، ایران.

3 گروه تولید و ژنتیک گیاهی، پردیس کشاورزی و منابع طبیعی، دانشکاه رازی.

چکیده

زراعت دانه روغنی کاملینا قابلیت فراوانی برای قرار گرفتن در الگوی کشت دیمزارهای ایران را دارد. در زراعت دیم، مرحله جوانه ‏زنی و استقرار بذر معمولاً با خشکی مواجه است. هدف این تحقیق، بررسی اهمیت کاربرد غلظت‏های مختلف سیلیکون بر ویژگی‏ های جوانه ‏زنی بذر و رشد گیاهچه کاملینا در شرایط تنش خشکی است. آزمایش به صورت فاکتوریل بر پایه طرح کاملاً تصادفی با سه تکرار در آزمایشگاه بذر دانشگاه رازی اجرا شد. فاکتورها شامل دو ژنوتیپ کاملینا (رقم سهیل و لاین-84)، چهار سطح تنش خشکی (صفر، 3-، 6-، 9- بار با استفاده از پلی‌اتیلن‌گلیکول 6000) و پنج سطح سیلیکون (صفر، 2، 4، 6 و 8 میلی مولار با استفاده از سیلیکات سدیم) بودند. بر اساس نتایج، افزایش تنش خشکی سبب کاهش ویژگی های جوانه ‏زنی بذر و رشد گیاهچه گردید. اما با استفاده از سیلیکون، درصد جوانه زنی، سرعت جوانه‌زنی، طول گیاهچه، وزن خشک گیاهچه، شاخص‏های طولی و وزنی بنیه گیاهچه و ضریب آلومتریک وزن خشک ساقه‌چه به ریشه‌چه افزایش یافتند. برای افزایش صفات اندازه‌گیری شده، غلظت‌های سیلیکون 6 و 8 میلی‏ مولار بهتر از سایر غلظت‌ها عمل کردند. به طور کلی، سیلیکون با ارتقاء خصوصیات جوانه‌ زنی بذر و رشد گیاهچه در شرایط تنش، در تخفیف اثر تنش خشکی در مرحله رشد گیاهچه ‏ای کاملینا مؤثر بود. بنابراین، به نظر می رسد سیلیکون عامل موثری در این گونه بررسی ها و بررسی قابلیت استفاده از آن در تکنولوژی بذر کاملینا و پوشش دار کردن بذر برای مناطق دیم داشته باشد.

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